Posts in de
Our article on cubic GaN was featured on the front page of J. Appl. Phys.
- 08 Januar 2026
The article “Cubic InGaN for red emission: Improved phase stability and emission properties by metal-modulated epitaxy” published by the PDI in collaboration with the group of Prof. Sangam Chatterjee and Dr. Jörg Schörmann from the University of Giessen [1] was selected for the cover of the 22nd issue in 2025 of the Journal of Applied Physics. This work includes CL measurements by Aidan Campbell on samples from Silas Jentsch and Mario Zscherp. Spatially resolved CL made it possible to understand the origin of a second emission band in the spectra. The article was also featured on the news portal Semiconductors Today.
ZALKAL presence at the ICNS-15
- 25 Mai 2025
At the 15th International Conference on Nitride Semiconductors (ICNS) in Malmö, Sweden, from July 6-11, 2025, the ZALKAL application laboratory will be represented with several presentations. Due to the design for the UV spectral range, the characterization of (Al,Ga)N layers and heterostructures is one of the focal points of ZALKAL’s current work. The following contributions of the ZALKAL team have been accepted as oral presentations:
