ZALKAL presence at the ICNS-15#
At the 15th International Conference on Nitride Semiconductors (ICNS) in Malmö, Sweden, from July 6-11, 2025, the ZALKAL application laboratory will be represented with several presentations. Due to the design for the UV spectral range, the characterization of (Al,Ga)N layers and heterostructures is one of the focal points of ZALKAL’s current work. The following contributions of the ZALKAL team have been accepted as oral presentations:
Aidan Campbell: “Multimicroscopy study of charge carrier dynamics in highly uniform (In,Ga)N layers”
Dr. Kagiso Loeto: “High-Resolution Cathodoluminescence Imaging of AlGaN Deep-UV Quantum Wells”
Domenik Spallek: “Local strain introduced by single threading dislocations in GaN studied by electron backscatter diffraction and cathodoluminescence spectroscopy”
Dr. Jonas Lähnemann: “Dislocation correlations in GaN epitaxial films revealed by high-resolution electron backscatter diffraction”
