Our article on cubic GaN was featured on the front page of J. Appl. Phys.

The article “Cubic InGaN for red emission: Improved phase stability and emission properties by metal-modulated epitaxy” published by the PDI in collaboration with the group of Prof. Sangam Chatterjee and Dr. Jörg Schörmann from the University of Giessen [1] was selected for the cover of the 22nd issue in 2025 of the Journal of Applied Physics. This work includes CL measurements by Aidan Campbell on samples from Silas Jentsch and Mario Zscherp. Spatially resolved CL made it possible to understand the origin of a second emission band in the spectra. The article was also featured on the news portal Semiconductors Today.

[1]

Silas A. Jentsch, Mario F. Zscherp, Aidan F. Campbell, Markus Stein, Matthew Chia, Donat J. As, Jonas Lähnemann, Sangam Chatterjee, and Jörg Schörmann. Cubic InGaN for red emission: Improved phase stability and emission properties by metal-modulated epitaxy. J. Appl. Phys., 138(22):225702, December 2025. doi:10.1063/5.0305390.

HyperSpy receives Open Science Award for Open Source Research Software   ZALKAL at the DPG Spring Meeting 2026