Our article on AlN luminescence was featured on the front page of APL Materials

The article “Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy”[1] published by the PDI in collaboration with the research group of Prof. Debdeep Jena at Cornell University was chosen for the August edition of the journal APL Materials. This work is based on measurements taken during the DAAD Rise Pro stay of Len van Deurzen at the PDI in fall 2023 and has provided important impulses for the specification of ZALKAL’s optics and detectors in the UV spectral range.

[1]

L. Van Deurzen, J. Singhal, J. Encomendero, N. Pieczulewski, C. S. Chang, Y. Cho, D. A. Muller, H. G. Xing, D. Jena, O. Brandt, and J. Lähnemann. Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy. APL Mater., 11(8):081109, August 2023. arXiv:2305.10542, doi:10.1063/5.0158390.

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